沟槽式FS-IGBT各部分对其性能的影响研究Research on influence of trench FS-IGBT ′s each part on its performance
张满红,邹其峰
摘要(Abstract)：
沟槽式FS-IGBT是当前IGBT中最为先进的结构,它结合PT-IGBT和NPT-IGBT各自的优点,具有较薄的N-区以及FS场截止层,能够使导通压降更低并且可以有效减少关断时间和关断损耗。主要通过仿真软件Sentaurus TCAD对FS-IGBT进行工艺与电学特性仿真,通过改变不同部分的参数,如栅极的长宽,N型漂移区的厚度,P-base区的注入剂量及能量等,研究对其性能的影响。结果表明栅极的长宽和漂移区厚度的增加会使BV变大,场截止层电阻率的增加会使导通电压变小,阈值电压会随着P-base区的注入剂量及能量的变大而变大。通过仿真结果得到了结构参数对器件性能的影响,为FS-IGBT的设计提供参考。
关键词(KeyWords)： FS-IGBT;Sentaurus TCAD;结构仿真;电学特性;性能影响;导通电压
基金项目(Foundation): 国家自然科学基金(61176080)~~
作者(Author): 张满红,邹其峰
DOI: 10.16652/j.issn.1004-373x.2018.14.002
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