多约束下寻找关键门的门替换技术缓解电路的NBTI效应Gate replacement technology for critical gate searching under multiple constraints to mitigate NBTI effect of circuit
周瑞云,易茂祥,黄正峰
摘要(Abstract)：
随着晶体管特征尺寸的不断减小,威胁数字电路可靠性的一个重要因素是负偏置温度不稳定性。为了缓解NBTI效应对电路产生的老化影响,文中提出时延约束、路径约束和考虑非门的可防护性约束的多约束下,通过计算门的影响因数的大小来寻找定位关键门集合,用门替换的方法来防护关键门。通过实验进行证明,文中提出的方法不仅识别出的关键门数量少,且更加精准,老化的时延改善率更高。
关键词(KeyWords)： 负偏置温度不稳定性;电路老化;关键门;时延约束;影响因数;门替换
基金项目(Foundation): 国家自然科学基金资助项目(61371025);国家自然科学基金资助项目(61274036)~~
作者(Author): 周瑞云,易茂祥,黄正峰
DOI: 10.16652/j.issn.1004-373x.2018.22.028
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