低相位噪声HBT单片压控振荡器的设计A Design of Low Phase Noise HBT Voltage Controlled Oscillator
丁恒,卢启堂,王家礼
摘要(Abstract)：
与传统的硅双极晶体管(Si BJT)相比,异质结双极晶体管(HBT)具有特征频率高、1/f噪声小的优点,可以用在微波频段内的单片集成电路设计中。采用异质结双极晶体管(HBT)设计一种低相位噪声HBT单片VCO电路,芯片电路测试结果:电压控制频率范围fo=8.0~9.5 GHz;输出功率Pout=7~9.5 dBm;在偏离振荡中心频率foffset为100 kHz时相位噪声Pn=-106 dBc/Hz。
关键词(KeyWords)： HBT;压控振荡器;微波单片集成电路;相位噪声
基金项目(Foundation):
作者(Author): 丁恒,卢启堂,王家礼
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