体硅高压LDMOS器件电学特性温度效应的研究Research on Temperature Effect of the Electrical Parameters of the Bulk-Silicon High-voltage LDMOSFET
刘侠,王钦
摘要(Abstract)：
从等温和非等温两个角度,在250 K~573 K(-23℃~300℃)范围内,对体硅高压LDMOS的主要电学参数随温度的变化进行了研究。系统地研究了体硅高压LDMOS阈值电压、导通电阻和饱和电流等主要电学参数的温度效应及其机理。
关键词(KeyWords)： 体硅LDMOS;等温;非等温;负阻效应
基金项目(Foundation):
作者(Author): 刘侠,王钦
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