高攀,杨小艳,张林

• 1:长安大学电子与控制工程学院

摘要(Abstract)：

SiC基温度传感器由于可以实现比Si基温度传感器高得多的工作温度而备受重视。从理论和实验两方面研究影响SiC SBD基温度传感器灵敏度的因素。基于热电子发射理论的解析模型表明影响温度传感器灵敏度的因素主要是理想因子。采用Spice仿真不同偏置电流下SiC SBD的V-T关系,结果表明灵敏度随着正向电流的减小而增大并且线性度良好。采用10 mA的恒流源偏置电路测试了三个厂商的SiC SBD的V-T特性,结果发现三种SiC SBD测温上限均高于400℃,并且线性度较好,灵敏度均接近1.5 m V/℃。最后对提高SiC SBD基温度传感器的灵敏度提出了优化设计方案。

关键词(KeyWords)： SiC基温度传感器;肖特基势垒二极管;V-T特性;偏置电路;线性度;灵敏度

Abstract:

Keywords:

基金项目(Foundation): 陕西省自然科学基础研究计划项目(2015JM63570);; 西安市科技局项目(CXY1441(9));; 国家级大学生创新创业训练项目(201510710126)~~

作者(Author): 高攀,杨小艳,张林

DOI: 10.16652/j.issn.1004-373x.2018.10.018

参考文献(References)：

• [1]贺晓金,张晋敏.NTC热敏电阻的研究现状及发展方向[J].电子技术与软件工程,2016(10):130.HE Xiaojin,ZHANG Jinmin.Research status and development direction of NTC thermistors[J].Electronic technology&software engineering,2016(10):130.
• [2]宋姗姗.热电阻和热电偶测温原理与误差分析[J].工程技术,2016,6(11):150.SONG Shanshan.Thermal resistance and thermocouple temperature measurement principle and error analysis[J].Engineering technology,2016,6(11):150.
• [3]CASADY J B,DILLARD W C,JOHNSON R W,et al.A hybrid 6H-Si C temperature sensor operational from 25℃to 500℃[J].IEEE transactions on components,packaging and manufacturing technology,1996,19(3):416-422.
• [4]ZHANG N,PISANO A P.Harsh environment temperature sensor based on 4H-Silicon carbide PN diode[C]//Proceedings of17th International Conference on Solid-State Sensors,Actuators and Microsystems.Barcelona:IEEE,2013:1016-1019.
• [5]胡林辉,谢家纯,王丽玉,等.4H-Si C肖特基势垒二极管温度特性研究[J].中国科学技术大学学报,2003,33(6):688-691.HU Linhui,XIE Jiachun,WANG Liyu,et al.Temperature characteristics of 4H-Si C Schottky barrier diode[J].Journal of University of Science&Technology of China,2003,33(6):688-691.
• [6]徐昌发,杨银堂,刘莉.4H-Si C MOSFET的温度特性研究[J].物理学报,2002,51(5):1113-1117.XU Changfa,YANG Yintang,LIU Li.Study on the temperature properties of 4H-Si C MOSFET[J].Acta physica sinica,2002,51(5):1113-1117.
• [7]张林,肖剑,邱彦章,等.Ti/4H-Si C肖特基势垒二极管抗辐射特性的研究[J].物理学报,2011,60(5):545-549.ZHANG Lin,XIAO Jian,QIU Yanzhang,et al.Radiation effect on Ti/4H-Si C SBD of gamma-ray,electrons and neutrons[J].Acta physica sinica,2011,60(5):545-549.
• [8]徐丹,殷景华.SBD势垒高度的影响因素[J].哈尔滨理工大学学报,2007,12(5):50-52.XU Dan,YIN Jinghua.The influence of factors on Schottky Barrier Height[J].Journal of Harbin University of Science and Technology,2007,12(5):50-52.
• [9]申君君,王巍,王玉青.4H-Si C肖特基二极管温度传感器模型分析[J].重庆邮电大学学报(自然科学版),2008,20(z1):42-44.SHEN Junjun,WANG Wei,WANG Yuqing.Study on model of 4H-Si C Schottky diodes temperature sensor[J].Journal of Chongqing University of Posts and Telecommunications(Natural science edition),2008,20(S1):42-44.
• [10]RAO S,PANGALLO G,PEZZIMENTI F,et al.High-performance temperature sensor based on 4H-Si C Schottky diodes[J].IEEE electron device letters,2015,36(7):720-722.