工作在动态阈值MOS的特性研究Performance Study of MOS Working in Dynamic Threshold
石立春
摘要(Abstract)：
通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。DTMOS是实现低电压、低功耗的一种有效手段。
关键词(KeyWords)： 动态阈值;工作特性;MOSFET;栅极
基金项目(Foundation):
作者(Author): 石立春
参考文献(References)：
- [1]Koichi Nose,Masayuki Hirabayashi,Takayasu Sakurai.VTH-Hopping Scheme to Reduce Subthreshold Leakage for Low-Power Processors[J].IEEE J.Solid-State Circuits,2002,37(3):413-419.
- [2]Giustolisi G,Palumbo G,Criscione M,et al.A Low-VoltageLow-Power Voltage Reference Based on Subthreshold MOS-FETs[J].IEEE J.Solid-State Circuits,2003,38(1):151-154.
- [3]Rudenko T,Kilchytska V,Jean-Pierre Colinge.On the High-Temperature Subthreshold Slope of Thin-Film SOI MOS-FETs.IEEE Electron Device Letters,2002,23(3).
- [4]Jae-Joon Kim,Kaushik Roy.Double Gate-MOSFET Sub-threshold Circuit for Ultralow Power Applications[J].IEEETrans.Elec.Dev.,2004,51(9):1 468-1 474.
- [5]Aimad El Mourabit,Guo-Neng Lu,Patrick Patrick Pittet.Wide-Linear-Range Subthreshold OTA for Low-Power,Low-Voltage,and Low-Frequency Applications[J].IEEE Trans.CircuitsSyst.I,Regular Papers,2005,52(8):1 481-1 488.
- [6]Assader F,Sinitsky D.Dynamic threshold-voltage MOSFET(DTMOS)for Ultra-low Voltage VLSI[J].IEEE Trans.Elec.,1997,44:414-421.
- [7]Soeleman H,Roy K,Paul B.Robust Subthreshold Logic forUltra-Low Power Operation[J].IEEE Trans.Elec.VLSISystems,2001,9(1):90-99.
- [8]Assaderaghi F.DTMOS:Its Derivatives and Variations andTheir Potential Applications[C].The 12rd Intl Conf.on Mi-croelectronics,2000:24-29.
- [9]Elgebaly M,Sachdev M.A Sub-0.5 V Dynamic ThresholdPMOS(DTPMOS)Scheme for Bulk CMOS Technologies[C].The 13rd Intl.Conf.on Microelectronics,2001:9-10.
- [10]Elgharbawy W,Bayoumi M.B-DTNMOS:a Novel Bulk Dy-namic Threshold NMOS Scheme[J].Proceedings of the2004 International Symposium,2004,2:23-26.