IGBT驱动电路密勒效应的应对策略分析Strategy analysis on Miller effect of IGBT driver circuit
宫鑫,王飞,彭文亮,许强强
摘要(Abstract)：
IGBT的门极驱动电路影响IGBT的通态压降、开关时间、开关损耗、承受短路电流能力等,决定了IGBT的静态与动态特性。针对IGBT在开通和关断时,密勒效应对驱动的影响及其应对策略进行研究和分析。分析了密勒电容引起的寄生导通效应的4种应对策略,包括改变门极电阻,增加GE间电容,采用负压驱动以及有源密勒钳位技术,并分析了驱动电路中门极电阻对IGBT性能的影响。在此基础上,进行了实验对比,给出了实验分析结果。此外还对驱动与控制板的线缆连接要求进行了测试对比。实验结果表明,门极电阻的设置直接影响IGBT的开关性能,实际应用中需要综合考虑实际需求选择合适的门极电阻值来保证IGBT最优化地开通关断,密勒效应中的密勒电容对IGBT的开关性能影响非常大,驱动与控制板的线缆连接要求越短越好。
关键词(KeyWords)： IGBT;驱动电路;密勒效应;分布电容;门极电阻;动态特性
基金项目(Foundation): 广东省普通高校特色创新项目(2015KTSCX173)~~
作者(Author): 宫鑫,王飞,彭文亮,许强强
DOI: 10.16652/j.issn.1004-373x.2018.02.011
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