陈利,李开航,郭东辉

• 1:厦门大学
• 2:厦门大学
• 3:厦门大学 福建厦门361005
• 4:厦门元顺微电子技术有限公司福建厦门361005

摘要(Abstract)：

场板与场限环是用来提高功率MOSFET抗电压击穿能力的常用结终端保护技术,文章将分别介绍场板与场限环结终端保护技术各自的特点和耐压敏感参数,通过场板和场限环的互补组合来优化设计一款高耐压的VDMOS器件结构,最后采用ATHENA(工艺模拟)和ATLAS(器件模拟)工具来仿真验证优化设计的结果。

关键词(KeyWords)： 高压;功率MOSFET;结终端保护;场板;场限环

Abstract:

Keywords:

基金项目(Foundation): 国家火炬计划项目(205EB010933);; 福建省自然科学基金项目(A0410007);; 厦门市科技项目的联合资助

作者(Author): 陈利,李开航,郭东辉

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