自举高端驱动浮动地负过冲闭锁问题Latch-up Problem Resulting from Negative Undershoot of High-voltage-side Floating Reference in Bootstrap Gate-drive IC
王友军
摘要(Abstract)：
高压栅极驱动集成电路的实现中都设计有一定的开关噪声耐量,然而,由于结构上不是完全电隔离的,对噪声自然敏感,用于驱动感性负载时,开关换流期在高端浮动地上产生的过负压会使芯片闭锁,导致芯片高端驱动输出失常,甚至电路毁坏,就过负压产生原因、闭锁机理及在驱动集成电路的高端浮动地与桥输出之间加入电阻网络等电路级抑制措施进行了详细分析和介绍。
关键词(KeyWords)： 高压集成电路;功率MOS栅驱动集成电路;电平位移;自举;闭锁
基金项目(Foundation):
作者(Author): 王友军
DOI: 10.16652/j.issn.1004-373x.2009.21.024
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