焊层空洞对IGBT芯片温度的影响Effect of void in solder layer on IGBT chip temperature
郝建红,苏立昌
摘要(Abstract)：
焊层空洞是造成IGBT模块散热不良的主要因素,基于IGBT的七层结构,建立了IGBT模块封装结构的三维有限元模型并对其进行热分析,研究焊层空洞对IGBT芯片温度的影响。对比了有无焊层空洞时IGBT模块的整体温度分布,分析了空洞类型、空洞大小、空洞形状、空洞数量及空洞分布对IGBT芯片温度分布的影响。研究结果表明:芯片焊层空洞对芯片温度的影响较大,衬板焊层空洞对芯片温度的影响较小;贯穿型空洞对芯片温度的影响要大于非贯穿型空洞;单个空洞越大,IGBT芯片温度越高;相同形状的空洞,处于边角位置比处于焊层内部对芯片温度影响大;多个空洞分布越集中,芯片温度越高;焊层缝隙对芯片温度的影响要小于空洞对芯片温度的影响。因此,在封装过程中应避免出现芯片焊层空洞,以提高IGBT的可靠性。
关键词(KeyWords)： 焊层空洞;IGBT模块;有限元;芯片焊层;热分析;芯片温度
基金项目(Foundation): 国家自然科学基金资助项目(61372050)~~
作者(Author): 郝建红,苏立昌
DOI: 10.16652/j.issn.1004-373x.2018.03.035
参考文献(References)：
- [1]刘勇.微电子器件及封装的建模与仿真[M].北京:科学出版社,2010.LIU Yong.Modeling and simulation of microelectronic devices and packages[M].Beijing:Science Press,2010.
- [2]张小玲,张健,谢雪松,等.IGBT热特性的仿真及焊料层分析[J].功能材料与器件科学,2011,17(6):555-558.ZHANG Xiaoling,ZHANG Jian,XIE Xuesong,et al.Simulation of thermal properties and solder layer analysis of IGBT[J].Functional materials and device science,2011,17(6):555-558.
- [3]吴煜东,常桂钦,彭勇殿,等.焊层空洞对IGBT模块热应力的影响[J].大功率变流技术,2014(1):17-23.WU Yudong,CHANG Guiqin,PENG Yongdian,et al.The influence of welding hole on thermal stress of IGBT module[J].High power converter technology,2014(1):17-23.
- [4]徐玲,周洋,张泽峰,等.IGBT模块焊料层空洞对模块温度影响的研究[J].中国电子科学研究院学报,2014,9(2):125-129.XU Ling,ZHOU Yang,ZHANG Zefeng,et al.Research on the influence of IGBT module solder layer voids on module temperature[J].Journal of the Chinese Academy of Electronic Science,2014,9(2):125-129.
- [5]张健,张小玲,吕长志,等.IGBT焊料层中的空洞对器件热可靠性的影响[J].硅电子学,2011,31(5):517-521.ZHANG Jian,ZHANG Xiaoling,LüChangzhi,et al.The influence of voids in IGBT solder layer on thermal reliability of devices[J].Silicon electronics,2011,31(5):517-521.
- [6]吴昊,陈铭,高立明,等.粘结层空洞对功率器件封装热阻的影响[J].半导体光电,2013,32(2):226-230.WU Hao,CHEN Ming,GAO Liming,et al.Influence of voids in bonding layer on thermal resistance of power devices[J].Semiconductor optoelectronics,2013,32(2):226-230.
- [7]OTIABA K C,BHATTI R S,EKERE N N,et al.Numerical study on thermal impacts of different void patterns on performance of chip-scale packaged power device[J].Microelectronic reliability,2012,52(7):1409-1419.
- [8]KATSIS D C,VANWYK J D.A thermal mechanical and electrical study of voiding in the solder die-attach of power MOSFETs[J].IEEE transaction on components and packaging technologies,2006,29(1):127-136.
- [9]ONKI J,CHONAN Y,KOMIYAMA T,et al.A new void free soldering process in large area,high power IGBT modules[C]//Proceedings of 2000 ISPSO.Toulousse,France:IEEE,2000:367-370.
- [10]ONUKI J,CHONAN Y,KOMIYAMA T,et al.Influence of soldering conditions on void formation in large-area solder joints[J].Materials transactions,2002,43(7):1774-1777.
- [11]HOLMES D G,LIPO T A.Pulse width modulation for power converters[M].New York:Wiley,2003.